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Manufacturer Part #

STP35N65DM2

N-channel 650 V 110 mOhm 250 W Through Hole MDmesh™ DM2 Power Mosfet - TO-220

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1908
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 110mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 56.3nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 32A
Turn-on Delay Time: 23.4ns
Turn-off Delay Time: 72ns
Rise Time: 23ns
Fall Time: 10.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 2540pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Total
$2,540.00
USD
Quantity
Web Price
50
$4.16
150
$2.91
250
$2.80
500
$2.67
1,000+
$2.54
Product Variant Information section