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Manufacturer Part #

STP75NF20

Single N-Channel 200 V 190 W 84 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP75NF20 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.034Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 75A
Turn-on Delay Time: 53ns
Turn-off Delay Time: 75ns
Rise Time: 33ns
Fall Time: 29ns
Operating Temp Range: -50°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.52mm
Length: 10.4mm
Input Capacitance: 3260pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,510.00
USD
Quantity
Unit Price
50
$1.55
200
$1.53
750
$1.51
1,500
$1.50
3,750+
$1.47
Product Variant Information section