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Manufacturer Part #

STS10DN3LH5

Dual N-Channel 30 V 0.019 Ohm 10 A Surface Mount Power MOSFET - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 4.6nC
Mounting Method: Surface Mount
Features & Applications

The STS10DN3LH5 is a dual N-Channel STripFET™ V Power MOSFET.

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. It is available in a SO-8 package.

Features:

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Very low switching gate charge
  • High avalanche ruggedness
  • Low gate drive power losses

Applications:

  • Switching applications
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Total
$0.94
USD
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Quantity
Web Price
1
$0.94
50
$0.72
100
$0.685
250
$0.645
500+
$0.615