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Manufacturer Part #

STW28N60M2

Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2030
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 170W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 22A
Turn-on Delay Time: 14.5ns
Turn-off Delay Time: 100ns
Rise Time: 7.2ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 1440pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
600
Multiple Of:
30
Total
$930.00
USD
Quantity
Web Price
1
$2.30
30
$1.82
100
$1.68
300
$1.55
1,000+
$1.43
Product Variant Information section