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Manufacturer Part #

STW45NM60

N-Channel 650 V 0.11 Ohm Flange Mount MDmesh Power Mosfet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code:
Product Specification Section
STMicroelectronics STW45NM60 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 417|W
Qg Gate Charge: 134nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
$Features & Applications

The STW4NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.

Features:

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$12,330.00
USD
Quantity
Web Price
1
$25.69
5
$24.07
25
$22.56
100
$21.33
250+
$20.55