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Manufacturer Part #

STWA35N65DM2

N-channel 650 V 110 mOhm Through Hole MDmesh™ DM2 Power Mosfet - TO-247

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1907
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 87mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 69nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 38A
Turn-on Delay Time: 22.5ns
Turn-off Delay Time: 89ns
Rise Time: 21ns
Fall Time: 10.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 3200pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
600
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Total
$2,022.00
USD
Quantity
Web Price
30
$4.14
90
$3.56
150
$3.50
450
$3.37
750+
$3.31
Product Variant Information section