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Nexperia | GAN041-650WSBQ

Manufacturer Part #

GAN041-650WSBQ

650 V 35 mOhm Through Hole N-Channel Gallium Nitride (GaN) FET - TO-247

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2351
Product Specification Section
Nexperia GAN041-650WSBQ - Technical Attributes
Attributes Table
Technology: GaNFET (Gallium Nitride)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 47.2A
Input Capacitance: 1500pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
270
USA:
270
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
270
Multiple Of:
300
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,849.50
USD
Quantity
Unit Price
300+
$6.85
Product Variant Information section