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Manufacturer Part #

IMBF170R650M1XTMA1

1700 V 7.4A 88W Surface Mount N-Channel Silicon Carbide MOSFET - PG-TO263-7-13

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2220
Product Specification Section
Infineon IMBF170R650M1XTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 7.4A
Input Capacitance: 422pF
Power Dissipation: 88W
Operating Temp Range: -55°C to +175°C
Package Style:  PG-TO-263-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,650.00
USD
Quantity
Web Price
1,000+
$2.65
Product Variant Information section