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  6. IMBG120R140M1HXTMA1

Infineon | IMBG120R140M1HXTMA1

Manufacturer Part #

IMBG120R140M1HXTMA1

CoolSiC Series N-Channel 1200 V 18A 89mOhm 13.4 nC 107W SiC MOSFET PG-TO263-7-12

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Infineon IMBG120R140M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 18A
Input Capacitance: 491pF
Power Dissipation: 107W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,010.00
USD
Quantity
Unit Price
1,000+
$3.01
Product Variant Information section