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  6. IMT65R083M1HXUMA1

Infineon | IMT65R083M1HXUMA1

Manufacturer Part #

IMT65R083M1HXUMA1

IMT65 Series 650V 59A 158W 111mOhm Silicon Carbide MOSFET PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2412
Product Specification Section
Infineon IMT65R083M1HXUMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 22A
Input Capacitance: 624pF
Power Dissipation: 158W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$5,260.00
USD
Quantity
Unit Price
2,000+
$2.63
Product Variant Information section