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Manufacturer Part #
IMW65R030M1HXKSA1
IMW65R Series N-Channel 650 V 58A 197W TH Silicon Carbide MOSFET TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2226 | ||||||||||
Infineon IMW65R030M1HXKSA1 - Product Specification
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Subject CoolSiCTM 650V G1 SiC datasheets revision updatesReason: (1) Naming and nomenclature update according to IEC 60747-8 Amd.1 Ed.3.03 from 2020(2) Update Tj,max from 150°C to 175°C for the following products:IMW65R027M1H, IMW65R048M1H,IMW65R072M1H,IMW65R107M1H,IMZA65R027M1H, IMZA65R048M1H,IMZA65R072M1H and IMZA65R107M1H(3) Extend the VGS(static) and VGS(dynamic) specs of products reported in Table 1 in TO247-3pin and TO247-4pin package.(4) Datasheet template harmonization with respect to CoolSiCTM MOSFET 650V G2
Part Status:
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Infineon IMW65R030M1HXKSA1 - Technical Attributes
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 58A |
| Input Capacitance: | 1643pF |
| Power Dissipation: | 197W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole