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Manufacturer Part #

IXSJ80N120R1K

1200 V 18 mOhm 80 A Through Hole N-Channel SiC Power MOSFET - ISO247-4L

ECAD Model:
Mfr. Name: Littelfuse - IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Littelfuse - IXYS IXSJ80N120R1K - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 85A
Input Capacitance: 4556pF
Power Dissipation: 223.2W
Operating Temp Range: -40°C to +150°C
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany:
0
210
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
30
Multiple Of:
30
Total
$691.50
USD
Quantity
Unit Price
30
$23.05
60
$22.92
90
$22.84
120
$22.78
150+
$22.60
Product Variant Information section