text.skipToContent text.skipToNavigation

Manufacturer Part #

NSF040120L4A0Q

1200 V 65A 60 mOhm 2600 pF Through Hole N-Channel SiC MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia NSF040120L4A0Q - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 65A
Input Capacitance: 2600pF
Power Dissipation: 306W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
Total
$11.25
USD
Quantity
Unit Price
1+
$11.25
Product Variant Information section