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Manufacturer Part #

NTH4L020N120SC1

NTH4L Series 1200 V 28 mOhm 510 W Through Hole N-Channel Power Mosfet - TO-247-4

Product Specification Section
onsemi NTH4L020N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 102A
Input Capacitance: 2943pF
Power Dissipation: 510W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
4,200
Germany (Online Only):
4,200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$22.36
USD
Quantity
Web Price
1
$22.36
4
$22.09
20
$21.78
40
$21.64
125+
$21.30