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Manufacturer Part #

NTH4L045N065SC1

N-Channel 650 V 55 A 187 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2309
Product Specification Section
onsemi NTH4L045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 1870pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
Germany (Online Only):
600
900
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$218.10
USD
Quantity
Web Price
30
$7.27
90
$7.21
120
$7.19
300
$7.14
450+
$7.10