Manufacturer Part #
NTH4L045N065SC1
N-Channel 650 V 55 A 187 W Through Hole Silicon Carbide MOSFET - TO-247-4L
Product Specification Section
onsemi NTH4L045N065SC1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NTH4L045N065SC1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain Current: | 55A |
Input Capacitance: | 1870pF |
Power Dissipation: | 187W |
Operating Temp Range: | -55°C to +175°C |
Package Style: | TO-247-4 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
600
Germany (Online Only):
600
Factory Lead Time:
17 Weeks
Quantity
Web Price
30
$7.27
90
$7.21
120
$7.19
300
$7.14
450+
$7.10
Product Variant Information section
Available Packaging
Package Qty:
30 per
Package Style:
TO-247-4
Mounting Method:
Through Hole