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Manufacturer Part #

NTHL080N120SC1A

1200 V 31A 178W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-3

Product Specification Section
onsemi NTHL080N120SC1A - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 31A
Input Capacitance: 1112pF
Power Dissipation: 178W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
2,940
USA:
2,940
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$200.70
USD
Quantity
Web Price
30
$6.69
90
$6.63
150
$6.61
300
$6.58
600+
$6.52