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Manufacturer Part #

NXH003P120M3F2PTHG

NXH003P120 Series 1200 V 350 A 5 mOhm Dual N-Channel SiC MOSFET Module - PIM-36

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code:
Product Specification Section
onsemi NXH003P120M3F2PTHG - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Product Status: Active
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 350A
Input Capacitance: 20889pF
Power Dissipation: 979W
Operating Temp Range: -40°C to +175°C
Mounting Method: Press Fit
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
100
Factory Lead Time:
12 Weeks
Minimum Order:
20
Multiple Of:
20
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,329.20
USD
Quantity
Web Price
20+
$216.46