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Manufacturer Part #

SCT2H12NYTB

N-Channel 1700 V 1.5 Ohm Surface Mount SiC Power Mosfet - TO-268-2

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Date Code: 2330
Product Specification Section
ROHM SCT2H12NYTB - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 4A
Input Capacitance: 184pF
Power Dissipation: 44W
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,200
USA:
1,600
Germany (Online Only):
1,600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
400
Multiple Of:
400
Total
$1,252.00
USD
Quantity
Web Price
400
$3.13
800
$3.08
1,200+
$3.02