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Manufacturer Part #

SCT2H12NZGC11

SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM

Product Specification Section
ROHM SCT2H12NZGC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 3.7A
Input Capacitance: 184pF
Power Dissipation: 35W
Mounting Method: Through Hole
Pricing Section
Global Stock:
7,870
Germany (Online Only):
7,870
10,350
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
10
Multiple Of:
30
Total
$38.50
USD
Quantity
Web Price
30
$3.85
90
$3.75
150
$3.70
600
$3.58
900+
$3.50