text.skipToContent text.skipToNavigation

Manufacturer Part #

SCT50N120

N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247

Product Specification Section
STMicroelectronics SCT50N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 65A
Input Capacitance: 1900pF
Power Dissipation: 318W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
41 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$710.10
USD
Quantity
Web Price
30
$23.67
60
$23.53
90
$23.45
120
$23.39
150+
$23.21