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Manufacturer Part #

SCTH90N65G2V-7

N-Channel 650 V 116 A Surface Mount Silicon Carbide Power MOSFET - H2PAK-7

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 2321
Product Specification Section
STMicroelectronics SCTH90N65G2V-7 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 116A
Input Capacitance: 3380pF
Power Dissipation: 484W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
Germany (Online Only):
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
45 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$21,660.00
USD
Quantity
Web Price
1,000+
$21.66