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Manufacturer Part #

NXH004P120M3F2PTHG

NXH004P120 Series 1200 V 5.5 mOhm Dual N-Channel SiC MOSFET Module - PIM-36

Product Specification Section
onsemi NXH004P120M3F2PTHG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 22V
Mounting Style: Vertical
Isolation Voltage-RMS: 4800V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 284A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Mounting Method: Press Fit
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1
Multiple Of:
20
Total
$185.09
USD
Quantity
Web Price
1
$185.09
2
$183.02
4
$180.96
5
$180.30
10+
$176.28