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24C65 Series 64 Kbit (8K x 8) 6 V Through Hole I2C Smart Serial EEPROM - PDIP-8

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Mfr. Name: Microchip
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Microchip 24C65/P - Technical Attributes
Attributes Table
Memory Density: 64kb
Memory Organization: 8 K x 8
Supply Voltage-Nom: 4.5V to 6V
Clock Frequency-Max: 400kHz
Write Cycle Time-Max (tWC): 5ms
Package Style:  PDIP-8
Mounting Method: Through Hole
Features & Applications

The 24C65 (24XX65*) is a “smart” 8 K x 8 Serial Electrically Erasable PROM. This device has been developed for advanced, low-power applications such as personal communications, and provides the systems designer with flexibility through the use of many new user-programmable features.

The 24C65 offers a relocatable 4 K bit block of ultra-high-endurance memory for data that changes frequently. The 24C65 features an input cache for fast write loads with a capacity of eight pages, or 64 bytes. This device also features programmable security options for E/W protection of critical data and/or code of up to fifteen 4 K blocks. Functional address lines allow the connection of up to eight 24XX65’s on the same bus for up to 512 K bits contiguous EEPROM memory. Advanced CMOS technology makes this device ideal for low-power nonvolatile code and data applications. The 24XX65 is available in the standard 8-pin plastic DIP and 8-pin surface mount SOIJ package.


  • Voltage Operating Range: 1.8 V to 6.0 V - Peak write current 3 mA at 6.0 V - Maximum read current 150 uA at 6 V - Standby current 1 μA, typical
  • Industry Standard Two-Wire Bus Protocol I2C™ Compatible
  • 8-Byte Page, or Byte modes Available
  • 2 ms Typical Write Cycle Time, Byte or Page
  • 64-Byte Input Cache for Fast Write Loads
  • Up to 8 devices may be connected to the same bus for up to 512 K bits total memory
  • Including 100 kHz (1.8 V ≤ Vcc < 4.5 V) and 400 kHz (4.5 V ≤ VCC ≤ 6.0 V) Compatibility
  • Programmable Block Security Options
  • Programmable Endurance Options
  • Schmitt Trigger, Filtered Inputs for Noise Suppression
  • Output Slope Control to Eliminate Ground Bounce
  • Self-Timed Erase and Write Cycles
  • Power-on/off Data Protection Circuitry
  • Endurance: - 10,000,000 E/W cycles for a High Endurance Block - 1,000,000 E/W cycles for a Standard
  • Endurance Block Electrostatic Discharge Protection > 4000 V
  • Data Retention > 200 years
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