Manufacturer Part #
FM25C160B Series 16 Kb (2 K x 8) 5 V Surface Mount SPI F-RAM Memory - SOIC-8
|Standard Pkg:|| |
Product Variant Information section
2500 per Reel
Addendum to PCN201502A - Qualification of Fab 25 as an Alternate Wafer Fab Site and a Bond Wire Change for Industrial-Grade 4Kb, 16Kb and 64Kb F-RAM Products Description of Change: The purpose of this addendum is to add additional parts to the affected part list. Refer to the "Remark" in the affected parts list. Cypress announced the qualification of Fab 25 (5204 East Ben White Boulevard, Austin, TX78741, USA) as an alternate wafer fab site for industrial-grade 4Kb, 16Kb and 64Kb F-RAM products. The new industrial-grade 4Kb, 16Kb and 64Kb F-RAM products are form, fit and function compatible with the current industrial-grade 4Kb, 16Kb and 64Kb F-RAM products manufactured at Global Foundries. Additionally, for products in the DFN package, the wire material is changed from Au to CuPdAu. There will be no change to the existing marketing part numbers. Benefit of Change: Qualification of alternate manufacturing sites and technologies is part of Cypress' ongoing flexible manufacturing initiative. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions. Approximate Implementation Date: Effective 90 days from the date of this notification or upon customer approval, whichever comes first, all shipments Industrial part numbers in the attached file will be supplied from Fab25 or other approved wafer fabrication sites. Anticipated Impact: Products fabricated at the new site are completely compatible with existing products from form, fit, functional, parametric and quality performance perspectives. Cypress also recommends that customers take this opportunity to review these changes against current application notes, system design considerations and customer environment conditions to assess impact (if any) to their application.
Subject: Addendum to PCN201502 - Qualification of Fab 25 as an Alternate Wafer Fab Site and a Bond Wire Change for Industrial-Grade 4Kb, 16Kb and 64Kb F-RAM ProductsDescription of Change: The purpose of this addendum is to update the affected parts list and to attached QTP194521 package qualification report missed in the initial PCN201502. Refer to the "Remark" in the affected parts list.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
|FRAM Type:||Non Volatile|
|Memory Organization:||2 K x 8|
|Supply Voltage-Nom:||4.5V to 5.5V|
|Temperature Range:||-40°C to +85°C|
|Mounting Method:||Surface Mount|
Features & Applications
The FM25C160B-GTR is a part of FM25C160 series 5.5 V , 16Kb (2K x 8) Serial F-RAM Memory. It has an operating temperature ranging from -40°C to +85°C and its available in SOIC-8 package.
It a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM.
- 16 K bit Ferroelectric Nonvolatile RAM:
- Organized as 2,048 x 8 bits
- High Endurance 1 Trillion (1012) Read/Writes
- 38 year Data Retention
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process
- Very Fast Serial Peripheral Interface - SPI:
- Up to 20 MHz maximum Bus Frequency
- Direct hardware replacement for EEPROM
- SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
- Sophisticated Write Protection Scheme:
- Hardware Protection
- Software Protection
- Low Power Consumption:
- 250 µA Active Current (1 MHz)
- 4 µA (typ.) Standby Current
- Computing : priter and Raid Systems
- Industrial, scientific and Medical
- Wireless Memory/RFID
2500 per Reel