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Manufacturer Part #


CY62146EV30 Series 4 Mbit (256 K x 16) 2.2 - 3.6 V 45 ns Static RAM - TSOP-44

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Mfr. Name: Cypress
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Product Specification Section
Cypress CY62146EV30LL-45ZSXIT - Technical Attributes
Attributes Table
Memory Density: 4Mb
Memory Organization: 256 K x 16
Supply Voltage-Nom: 2.2V to 3.6V
Access Time-Max: 45ns
Temperature Grade: Industrial
Package Style:  TSOP II-44
Mounting Method: Surface Mount
$Features & Applications
Cypress's high-speed synchronous SRAMs include standard synchronous pipelined, No Bus Latency(TM) (NoBL(TM)), Quad Data Rate(TM) (QDR(TM)), TagRAM, and Double Data Rate (DDR) SRAMs, and are typically used in networking applications.

Cypress is uniquely positioned in this market with enough revenue to support the R&D expenditures associated with owning our own fab while maintaining the focus necessary to handle customer SRAM needs.

Cypress is on the leading edge of technology by being the first to market with the 90-nanometer technology. Additionally, we are currently the market leader in the 72-Mbit standard synchronous, NoBL, QDR-II, and DDR-II SRAM devices--the world's highest-density and highest-bandwidth SRAMs

The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99%. You can find more information


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Global Stock:
Factory Stock:Factory Stock:
Factory Lead Time:
38 Weeks
Minimum Order:
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