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Manufacturer Part #

TSHG8200

830 nm 100 mA ±10° Through Hole High Speed Infrared Emitting Diode - T-1 3/4

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Wavelength: 830nm
Angle of Half Intensity: ±10°
Intensity: 180mW/sr
Forward (Drive) Current: 100mA
Forward Voltage: 1.5V
Package Style:  T-1 3/4
Mounting Method: Through Hole
Features & Applications
The TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. It has an Operating temperature ranges b/w -40 °C to 85 °C.

Features:

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Leads with stand-off
  • Peak wavelength: λp = 830 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 10°
  • Low forward voltage
  • Suitable for high pulse current operation
  • High modulation bandwidth: fc = 18 MHz
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:

  • Infrared radiation source for operation with CMOS cameras
  • High speed IR data transmission
  • Smoke-automatic fire detectors
Pricing Section
Stock:
0
Minimum Order:
4,000
Multiple Of:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$1,900.00
USD
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Quantity
Web Price
1+
$0.475
Product Variant Information section