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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 252,500

On Order:Order inventroy details 20,000
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 2,500
Multiple Of: 2,500
Quantity Web Price
2,500 $0.153
5,000 $0.135
7,500 $0.134
10,000+ $0.133
Total:

$382.50

USD
Attributes
Attributes Table
No of Channels 1
Isolation Voltage-RMS 3750V
Output Voltage-Max 80V
CTR-Min 80%
Operating Temp-Max 100°C
Features and Applications

The HMHA2801R2 consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm.

Features:

  • Compact 4-pin package - (2.4 mm maximum standoff height)
  • Half pitch leads for optimum board space savings
  • High current transfer ratio:
  • HMHA2801: 80-600%
  • HMHA2801A: 80-160%
  • HMHA2801B: 50-150%
  • HMHA2801C: 50-100%
  • HMHA281: 50-600%
  • HMHAA280: 50-600%
  • Available in tape and reel quantities of 500 and 2500
  • Applicable to infrared ray reflow (230 °C max, 30 seconds)
  • BSI (File #8611/8612). CSA (File #1201524), UL (file #E90700) and VDE (file #136480) certified

Applications:

  • TBA