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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 278

On Order:Order inventroy details 3,500
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $0.167
250 $0.154
1,000 $0.15
2,500 $0.148
10,000+ $0.145
Total:

$0.17

USD
Attributes
Attributes Table
Wavelength 880nm
Angle of Half Sensitivity ±12°
Power Dissipation 100mW
CE Voltage-Max 30V
Collector Current @ 25C 4mA
Features and Applications

The QSD123 is a 100 mW 30 V 880 nm Plastic Silicon Infrared Phototransistor. It comes in a Package of T-1 3/4 and Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: T-1 3/4
  • Notched Emitter: QED12X/QED22X/QED23X
  • Narrow Reception Angle: 24°C
  • Daylight Filter
  • Package Material and Color: Black Epoxy
  • High Sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSD12 Series of Phototransistor