Product Variant Information section
Available Packages
Package Qty:
250
Package Style:
T-1 3/4
Mounting Method:
Through Hole
Product Specification Section
Pricing Section
Stock: 278
On Order:Order inventroy details 3,500
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 1
Multiple Of: 1
| Quantity | Web Price |
|---|---|
| 1 | $0.167 |
| 250 | $0.154 |
| 1,000 | $0.15 |
| 2,500 | $0.148 |
| 10,000+ | $0.145 |
Attributes
Attributes Table
| Wavelength | 880nm |
| Angle of Half Sensitivity | ±12° |
| Power Dissipation | 100mW |
| CE Voltage-Max | 30V |
| Collector Current @ 25C | 4mA |
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Features and Applications
The QSD123 is a 100 mW 30 V 880 nm Plastic Silicon Infrared Phototransistor. It comes in a Package of T-1 3/4 and Operating temperature ranges from -40 °C to 100 °C.
Features:
- NPN Silicon Phototransistor
- Package Type: T-1 3/4
- Notched Emitter: QED12X/QED22X/QED23X
- Narrow Reception Angle: 24°C
- Daylight Filter
- Package Material and Color: Black Epoxy
- High Sensitivity
Applications:
- Automation
- Building & Home Controls
- Medical Electronics/Devices
- Home Audio System Components
- Consumer Appliances
View the QSD12 Series of Phototransistor