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Manufacturer Part #

QSE114

QSE114 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code:
Product Specification Section
onsemi QSE114 - Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±25°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 1mA
Mounting Method: Through Hole
Features & Applications

The QSE114 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: Sidelooker
  • Medium wide reception angle, 50°
  • Package material and color: black epoxy
  • Matched emitter: QEE113
  • Daylight filter
  • High sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSE Series of Phototransistor

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
37 Weeks
Minimum Order:
3500
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$619.50
USD
Quantity
Unit Price
500
$0.177
1,500
$0.177
5,000
$0.177
10,000
$0.177
20,000+
$0.177