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Manufacturer Part #

QSE133

QSE133 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2023
Product Specification Section
Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±25°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 9mA
Package Style:  RADIAL
Mounting Method: Through Hole
Features & Applications

The QSE133 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: Sidelooker
  • Medium wide reception angle, 50°
  • Package material and color: black epoxy
  • Matched emitter: QEE113
  • Daylight filter
  • High sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSE1 Series of Phototransistor

Pricing Section
Stock:
7,000
Minimum Order:
1
Multiple Of:
1
16,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.24
USD
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$0.235
200
$0.205
500
$0.199
2,000
$0.192
5,000+
$0.187
Product Variant Information section