Vishay’s SiR626DP is a fourth-generation TrenchFET® 60V N-channel MOSFET which enables power-system designers to improve the efficiency of DC-DC converters across the load profile.
The MOSFET combines low on-resistance with low output charge of just 68nC at a drain-source voltage of 30V and a gate-source voltage of 0V.
Ideal for designs with a high-power output, the SiR626DP also features an optimized interconnection design which reduces package resistance by 66%. Total on-resistance is 40% lower than that of the previous generation of 60V MOSFETs from Vishay. This helps to minimize conduction loss and reduce operating temperature. As a result, DC-DC converter designs can increase both their power density and output current per device.
The SiR626DP is supplied in a 6.2mm x 5.2mm SO-8 package.
SiR626DP: Low package resistance