text.skipToContent text.skipToNavigation





Vishay’s SiR626DP is a fourth-generation TrenchFET® 60V N-channel MOSFET which enables power-system designers to improve the efficiency of DC-DC converters across the load profile.

The MOSFET combines low on-resistance with low output charge of just 68nC at a drain-source voltage of 30V and a gate-source voltage of 0V.

Ideal for designs with a high-power output, the SiR626DP also features an optimized interconnection design which reduces package resistance by 66%. Total on-resistance is 40% lower than that of the previous generation of 60V MOSFETs from Vishay. This helps to minimize conduction loss and reduce operating temperature. As a result, DC-DC converter designs can increase both their power density and output current per device.

The SiR626DP is supplied in a 6.2mm x 5.2mm SO-8 package.


SiR626DP: Low package resistance


  • 100A maximum drain current
  • 104W maximum power dissipation
  • 2V minimum threshold voltage
  • Operating-temperature range: -55°C to 150°C
  • Synchronous rectification
  • 24V power systems
  • Motor drives
  • DC-DC converters
  • Solar micro-inverters
  • Power tools
FTM NA SideNav SubscribeTile EN
FTM NA Oct2018 SideNav Download