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Infineon Technologies has introduced an evaluation board implementing a half-bridge driver circuit which demonstrates the superior efficiency, thermal, and high-frequency switching characteristics of Silicon Carbide (SiC) semiconductor technology. The EVAL-1EDC20H12AH-SIC evaluation board features Infineon’s 1EDC20H12AH EiceDRIVER™ gate driver IC and the 1,200V IMZ120R030M1 CoolSiC™ MOSFET.
Infineon EVAL-1EDC20H12AH-SIC Evaluation Board
SiC MOSFET and gate driver evaluation board demonstrates high-efficiency half-bridge power circuit
Infineon Technologies EVAL-1EDC20H12AH-SIC is a newly-introduced evaluation board implementing a half-bridge driver circuit which demonstrates the superior efficiency, thermal, and high-frequency switching characteristics of Silicon Carbide (SiC) semiconductor technology.
The EVAL-1EDC20H12AH-SIC evaluation board features Infineon’s 1EDC20H12AH EiceDRIVER™ gate driver IC and the 1,200V IMZ120R030M1 CoolSiC™ MOSFET. The EiceDRIVER provides 2,500V of isolation, making it particularly suitable for use in high-voltage applications such as the power supplies in electric vehicle chargers, and in industrial motor drives.
The EVAL-1EDC20H12AH-SIC board by Infineon contains two gate drivers driving two SiC MOSFET switches in a half-bridge configuration. An additional gate driver is used to transfer over-current information through the isolation barrier at the high-voltage power stage to the low-voltage input stage. A DC-DC converter also provides galvanically isolated supply voltages to each of the MOSFET driver stages.
The SIC board’s use of SiC MOSFET technology provides valuable benefits to manufacturers of advanced power systems, including:
- Very high efficiency
- Reduced cooling effort
- Higher-frequency operation
- Increased power density
- Reduced system complexity
The board includes supporting circuits for functions such as voltage regulation and DC-DC conversion which make it simple for design engineers to start using it quickly in the laboratory and to evaluate its functions in an application scenario.
Discrete 1,200V SiC MOSFET Combines Low Losses and High Reliability
The IMZ120R030M1 1,200V CoolSiC™ MOSFET in a TO247-3 package builds on Infineon’s state-of-the-art trench semiconductor process which combines performance with reliability.
This Silicon Carbide (SiC) MOSFET offers various performance advantages over 1,200V-rated silicon MOSFETs.
Gate charge, just 63nC at 18V, is extremely low, as is input capacitance at 116pF. The internal commutation-proof body diode produces no reverse-recovery losses, and switching losses are low across the operating-temperature range.
CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies such as power factor correction circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.
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