Infineon OptiMOS™ 40V Power MOSFET
Innovative package design lowers on-resistance and improves thermal performance
Infineon has launched a 40V OptiMOS™ power MOSFET which features an innovative package design based on its Source-Down technology. In the MOSFET’s 3.3mm x 3.3mm package, the silicon is turned upside down inside the component, with the Source rather than the Drain potential connected to the PCB over the thermal pad.
This provides two important benefits to designers of products such as power tools, in which there is a requirement to increase power-handling capability while reducing the size of the complete system.
First, the Source-Down technology reduces on-resistance by as much as 25% compared to MOSFETs housed in a traditional Power Quad Flat No-lead (PQFN) package. Second, junction-to-case thermal resistance is also lower than that of MOSFETs in a conventional PQFN package.
These advantages result in improved performance in demanding, high-power applications which traditionally would have called for the use of a larger package with a 5mm x 6mm footprint. In particular, the new 40V OptiMOS Source-Down MOSFET can withstand high continuous currents of up to 205A at a gate-source voltage of 10V and a case temperature of 25°C.
The 40V OptiMOS Source-Down power MOSFET is available in two versions:
- The standard version has the part number IQE013N04LM6ATMA1
- The center-gate version has the part number IQE013N04LM6CGATMA1. This variant is optimized for the parallel operation of multiple devices.
Infineon introduced a 25V OptiMOS Source-Down MOSFET, the IQE006NE2LM5ATMA1, in February 2020. This 25V device is also available in a center-gate configuration, with the part number IQE006NE2LM5CGATMA1.
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