The fourth generation of the Vishay Siliconix 600V E series power MOSFETs offers high efficiency in telecoms, industrial and enterprise power-supply applications.
The introduction of the N-channel SiHP065N60E MOSFET now extends the appeal of Vishay’s E Series. The SiHP065N60E features the industry’s lowest gate charge times on-resistance, a key figure of merit for 600V MOSFETs used in power-conversion applications.
Maximum gate charge for the SiHP065N60E is rated at 74nC. On-resistance is 57mΩ at a gate-source voltage of 10V. This gives a figure of merit 25% lower than that of the closest competing MOSFET in the same class.
The device is able to achieve this outstanding performance because it is built on Vishay’s latest energy-efficient E series superjunction technology. This cuts on-resistance by 30% compared to previous 600V E series MOSFETs, while producing gate charge which is some 44% lower.
Efficiency and density in high-voltage power converters
With the SiHP065N60E and other members of the fourth-generation 600V E Series family, Vishay is addressing the need for efficiency and power-density improvements in the first stages of AC-DC power-system architectures: Power Factor Correction (PFC) and subsequent high-voltage DC-DC converter blocks.
Key product benefits include:
- Ultra-low on-resistance and gate charge reduce conduction and switching losses to save energy
- Low effective output capacitance improves switching performance
- Standard TO-220AB package
- Designed to withstand over-voltage transients in the avalanche mode with limits guaranteed through 100% UIS testing
SiHP065N60E: 74nC maximum gate charge