Manufacturer Part #
AS4C1M16S-7TCN
AS4C4M16S Series 16 Mb (1 M x 16) 143 MHz CMOS Synchronous DRAM - TSOP II-50
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| Mfr. Name: | Alliance Memory | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:117 per Tray Package Style:TSOP II-50 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Alliance Memory AS4C1M16S-7TCN - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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Alliance Memory AS4C1M16S-7TCN - Technical Attributes
Attributes Table
| Memory Type: | SDRAM |
| Memory Density: | 16Mb |
| Configuration: | 1 M x 16 |
| Supply Voltage-Nom: | 3V to 3.6V |
| CAS Latency: | 2 |
| Access Time-Max: | 5.4ns |
| Speed Grade: | 143MHz |
| Operating Temp Range: | 0°C to 70°C |
| Storage Temperature Range: | -55°C to +125°C |
| Package Style: | TSOP II-50 |
| Mounting Method: | Surface Mount |
Features & Applications
The AS4C1M16S-7TCN is a high-speed CMOS synchronous DRAM which is internally configured as a dual 512K word x 16 DRAM with a synchronous interface.
This device is well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.
Features:
- Fast access time: 5.4ns
- Fast clock rate: 143 MHz
- Self refresh mode: standard
- Internal pipelined architecture
- 512K word x 16-bit x 2-bank
- Programmable Mode registers
- CAS Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
- Individual byte controlled by LDQM and UDQM
- Auto Refresh and Self Refresh
- 4096 refresh cycles/64ms
- CKE power down mode
- JEDEC standard +3.3V±0.3V power supply
- Interface: LVTTL
- 50-pin 400 mil plastic TSOP II package
- Pb and Halogen Free
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
117+
$2.14
Product Variant Information section
Available Packaging
Package Qty:
117 per Tray
Package Style:
TSOP II-50
Mounting Method:
Surface Mount