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Manufacturer Part #

SI2307CDS-T1-E3

Single P-Channel 30 V 1.1 W 6.2 nC Silicon Surface Mount Mosfet - SOT-23

Modelo ECAD:
Nombre del Fabricante: Vishay
Número de pieza del fabricante:
Product Variant Information section
Código de fecha:
Product Specification Section
Vishay SI2307CDS-T1-E3 - Caracteristicas Técnicas
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.138Ω
Rated Power Dissipation: 1.1W
Qg Gate Charge: 6.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.7A
Turn-on Delay Time: 40ns
Turn-off Delay Time: 20ns
Rise Time: 60ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 340pF
Pricing Section
Stock global:
0
Alemania:
0
18.000
Stock en fábrica:Stock en fábrica:
0
Plazo de fábrica:
52+Weeks
Pedido mínimo:
3000
Múltiples de:
3000
Total
750,00 $
USD
Cantidad
Precio unitario
3.000
0,25 $
6.000
0,245 $
15.000+
0,24 $
Product Variant Information section