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Diodes Incorporated | DMG6601LVT-7

Manufacturer Part #

DMG6601LVT-7

N & P-Channel 30 V 110 mOhm Complementary Pair Enhancement Mode Mosfet

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2532
Product Specification Section
Diodes Incorporated DMG6601LVT-7 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 55mΩ/110mΩ
Rated Power Dissipation: 0.85W
Qg Gate Charge: 12.3nC/13.8nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 3.8A/2.5A
Turn-on Delay Time: 1.6ns/1.7ns
Turn-off Delay Time: 31.2ns/18.3ns
Rise Time: 7.4ns/4.6ns
Fall Time: 15.6ns/2.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V/0.8V
Input Capacitance: 422pF/541pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
9,000
USA:
9,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$232.20
USD
Quantity
Unit Price
3,000
$0.0774
9,000
$0.0755
15,000
$0.0746
45,000
$0.0728
75,000+
$0.0712
Product Variant Information section