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Manufacturer Part #
IXFA7N100P
Single N-Channel 1000 V 1.8 Ohm 47 nC 300 W MOSFET - TO-263
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| Nombre del Fabricante: | Littelfuse - IXYS | ||||||||||
| Número de pieza del fabricante: | Product Variant Information section Embalajes disponiblesCant. de paquetes:1 por Bulk Estilo de empaquetado:TO-263-3 (D2PAK) Método de montaje:Surface Mount | ||||||||||
| Código de fecha: | |||||||||||
Littelfuse - IXYS IXFA7N100P - Especificaciones de producto
Información de envío:
ECCN:
Información del CP:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Estado del producto:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IXFA7N100P&field4=Littelfuse - IXYS&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/ixfa7n100p-littelfuse-%E2%80%93-ixys-2118549
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IXFA7N100P&field4=Littelfuse - IXYS&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/ixfa7n100p-littelfuse-%E2%80%93-ixys-2118549
Littelfuse - IXYS IXFA7N100P - Caracteristicas Técnicas
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 1000V |
| Drain-Source On Resistance-Max: | 1.8Ω |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 47nC |
| Estilo de empaquetado: | TO-263-3 (D2PAK) |
| Método de montaje: | Surface Mount |
Embalajes disponibles
Cant. de paquetes:
1 por Bulk
Estilo de empaquetado:
TO-263-3 (D2PAK)
Método de montaje:
Surface Mount