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Manufacturer Part #

STD6N62K3

N-Channel 620 V 1.2 Ohm Surface Mount SuperMESH3™ Power MosFet - TO-252

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 1729
Product Specification Section
STMicroelectronics STD6N62K3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 620V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 90W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 5.5A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 49ns
Rise Time: 12ns
Fall Time: 20ns
Gate Source Threshold: 3.75V
Input Capacitance: 875pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
833
USA:
833
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2.12
USD
Quantity
Unit Price
1
$2.12
15
$2.05
75
$2.01
250
$1.98
1,250+
$1.93