Codice produttore
BSR316PH6327XTSA1
Single P-Channel 100 V 360 mA 1.8 Ohm 7 nC SIPMOS® Power Mosfet - PG-SC-59
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| Fabbricante: | Infineon | ||||||||||
| Confezione Standard: | Product Variant Information section Pacchetti disponibiliQ.tà confezione:3000 per Reel Tipologia confezione:SOT-23 (SC-59,TO-236) Metodo di montaggio:Surface Mount | ||||||||||
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Infineon BSR316PH6327XTSA1 - Specifiche del Prodotto
Informazioni sulla spedizione:
ECCN:
Informazioni PCN:
Detailed change informationSubject Transfer of wafer production, wafer test and pre-assembly location to IFX Kulim, and change of wafer diameter from 150 mm to 200 mm, and implementation of new mould compound for PG-TO252 package, for P-Channel Small Signal and Power MOSFETsReason Wafer production, wafer test and pre-assembly location will be transferred according to the global Infineon production strategyDescription Wafer production and wafer test locationWafer diameterPre-assembly location Wafer LotnumberMould compound(PG-TO252)Halogen Free Flag (PG-TO252)OPN incl. SP#(PG-TO252)Production Lot code Marking on device (PG-TO252) Note: See SPCN document for detailed description of changesIntended start of delivery 2026-03-31 or earlier based on customer approval
Stato del Prodotto:
Infineon BSR316PH6327XTSA1 - Caratteristiche Tecniche
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 2.2Ω |
| Rated Power Dissipation: | 0.5W |
| Qg Gate Charge: | 5.3nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 0.36A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 71ns |
| Rise Time: | 6ns |
| Fall Time: | 26ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Input Capacitance: | 124pF |
| Tipologia confezione: | SOT-23 (SC-59,TO-236) |
| Metodo di montaggio: | Surface Mount |
Pacchetti disponibili
Q.tà confezione:
3000 per Reel
Tipologia confezione:
SOT-23 (SC-59,TO-236)
Metodo di montaggio:
Surface Mount