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Infineon | IPN70R1K4P7SATMA1

Codice produttore

IPN70R1K4P7SATMA1

Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS™ Power Mosfet - SOT-223

Modello ECAD:
Fabbricante: Infineon
Confezione Standard:
Product Variant Information section
Codice data:
Product Specification Section
Infineon IPN70R1K4P7SATMA1 - Caratteristiche Tecniche
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 6.2W
Qg Gate Charge: 4.7nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 4A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 63ns
Rise Time: 4.9ns
Fall Time: 61ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 158pF
Tipologia confezione:  SOT-223 (TO-261-4, SC-73)
Metodo di montaggio: Surface Mount
Pricing Section
Stock globale:
0
Germania:
0
In ordine:
0
Stock in fabbrica:Stock in fabbrica:
0
Lead Time del produttore:
12 Weeks
Ordine minimo:
3000
Multiplo di:
3000
Totale
417,00 $
USD
Quantità
Prezzo unitario
3.000
0,139 $
6.000
0,138 $
9.000
0,137 $
12.000
0,136 $
15.000+
0,134 $
Product Variant Information section