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Manufacturer Part #

BSH105,215

BSH105 Series 20 V 200 mOhm 417 mW N-Ch Enhancement Mode MOS Transistor - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2116
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 200mΩ
Rated Power Dissipation: 417mW
Qg Gate Charge: 3.9nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.05A
Turn-on Delay Time: 2ns
Turn-off Delay Time: 45ns
Rise Time: 4.5ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.57V
Technology: Si
Input Capacitance: 152pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
360,000
Germany (Online Only):
360,000
630,000
Factory Stock:Factory Stock:
0
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$447.00
USD
Quantity
Web Price
3,000
$0.149
6,000
$0.122
12,000
$0.12
15,000+
$0.119
Product Variant Information section