Brighter, more efficient, and precision-engineered for next-gen technologies
Q65113A9877, Q65113A9878
Shape the future with the revolutionary IR:6 LED—an innovation that redefines the possibilities of infrared technology. Boosting up to 35% more brightness and achieving up to 42% increase in efficiency, this next generation IR chips set new benchmarks in performance.
Built on the ultimate thin-film semiconductor technology, this infrared LED portfolio is engineered to supercharge a wide range of applications — from precise biometric authentication and advanced machine vision to crystal-clear medical imaging or environmental-security monitoring. The device delivers exceptional light output and reliability, even in the toughest conditions, due to optimized thermal management and enhanced optical design.
Available in 850 nm, 940 nm, and the newly launched 920 nm wavelength, which provides superior response with most image sensors, the IR:6 marks the dawn of a new era in infrared innovation.
Features
- Up to 26% brighter IR illumination increasing the homogeneous illuminated target area.
- Higher efficiency up to 39% resulting in longer battery standby time and optimized system performance
Applications
- Up to 26% brighter IR illumination increasing the homogeneous illuminated target area.
- Higher efficiency up to 39% resulting in longer battery standby time and optimized system performance
