9A, SiC MOSFET DRIVER, 16L SOIC, NARROW | Series: Low-Side Driver with Charge Pump
IX4352NE
The IX4352NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an over current condition of the SiC-MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4352NE is rated for operational temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin narrow SOIC package.
Specifications
| Property | Value |
|---|---|
| Peak Drive Current | 9 |
| Output Resistance Source / Sink (Ω) | 2 / 1.5 |
| Logic Configurations | non-inverting |
| Enable Function | No |
| Under Voltage Lockout Maximum Threshold (V) | 10 |
| IC Package Type | 16-pin power SOIC with exposed thermal pad |
Features
- Matched rise and fall times
- Low propagation delay
- Wide operating voltage range
Applications
- On-board charger
- DC-DC converter
- Electric vehicle charging station
- Motor controller
- Power Inverter
