Contains an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package
NXH010P120MNF1PG
The NXH010P120MNF1 from onsemi is a high-performance power module that integrates a 10 mΩ, 1200 V Silicon Carbide (SiC) MOSFET half-bridge and a built-in thermistor into a compact and robust F1 package. Engineered for demanding power conversion applications, this module is designed to deliver high efficiency, low switching losses, and excellent thermal performance.
The SiC technology enables faster switching speeds and higher power density compared to traditional silicon solutions, making it ideal for next-generation power systems.
The module is available in versions with or without pre-applied Thermal Interface Material (TIM) to suit different cooling strategies, and includes press-fit pins for reliable, solder-free mounting.
