Designed to replace the traditional discrete power switches
BM3G201TD-LBZ
This gallium nitride (GaN) IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFETs. By integrating the 650 V enhancement GaN HEMT and silicon driver, the parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions.
Owing to this, a high switching slew rate up to 100 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost and PCB size.
BM3G201TD-LBZ is an optimal solution for electronic systems that require high power density and efficiency.
Features
- MOSFET driver compatibility
- Wide operating range for IN pin voltage
- Low propagation delay
- High dv/dt immunity
- Adjustable gate drive strength
- Desaturation protection
- Active miller clamp
- Thermal shutdown
Applications
- Industrial equipment
- Power supplies with high power density
- High efficiency demand or bridge topology such as totem-pole PFC
- LLC power supply
- Adapters
