PCIM Europe 2024

June 11 – 13, 2024

Nuremberg, Germany

CoolGaN™ GIT HEMT half-bridge evaluation board

Also with EiceDRIVER™ 2EDB8259Y

The EVAL_2EDB_HB_GaN by Infineon enables the testing of Infineon CoolGaN™ GIT HEMT in combination with EiceDRIVER™ 2EDB8259Y. The board allows to configure the auxiliary supply, that can be bipolar or unipolar, isolated or non-isolated, with bootstrap or without. Using an external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range.

This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors.

Features

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Configurable auxiliary supply: unipolar vs. bipolar (with regulation on positive or negative rail), isolated vs non-isolated (bootstrap)
  • Shunt on low-side GaN for current measurement

Applications

  • Telecom power supply
  • Server power supply
  • Micro inverter solutions

See datasheet