Featured in their HiP247-4 package
The STDES-SICGP4 reference design by STMicroelectronics allows evaluating the switching and thermal performance of power SiC MOSFETs in an HiP247-4 (four-lead) package in a half-bridge topology.
The MOSFETs are controlled by isolated gate drivers. Drivers are supplied by isolated DC-DC converters.
The system requires the connection of an external inductor, a source, a load, an auxiliary supply, and PWM signals. It can be used to test operation in buck or boost configuration.
It is possible to use a low inductance shunt or to assemble a coaxial shunt to measure current through the low side MOSFET. In this perspective, the board can be used as a tool for double pulse test (DPT), to measure overshoot (voltage and current), speed (di/dt; dv/dt), and switching energy (EON; EOFF; ERR).
Features
- Half-bridge structure assembled with power SiC MOSFETs in an HiP247-4 package
- Half-bridge driven by the STGAP2HS galvanic isolated gate driver optimized for SiC MOSFETs
- Isolated gate drivers supplied by an isolated fly-buck converter based on the L6986I
- Preset +18 V/-3 V supply voltage for output stage of isolated gate drivers
- Possibility to set a specific gate voltage, positive and negative level
- Possibility to set the gate resistor
- Low inductance sense resistor
- Prepared for a coaxial shunt resistor for a higher bandwidth of current measurement
- Specifications:Max. DC input/output voltage: 1 kVInput current level peak (duration up to 100 μs): 69 A
Applications
- Power supplies and converters
- Industrial power supply
