Hersteller Artikelnummer
IPW60R099P6XKSA1
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-247-3
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| Herstellername: | Infineon | ||||||||||
| Standard Verpackungsart: | Product Variant Information section Verfügbare PaketePaketmenge:30 pro Tube Paketstil:TO-247-3 Montagemethode:Through Hole | ||||||||||
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Product Specification Section
Infineon IPW60R099P6XKSA1 - Produktspezifikation
Versandinformationen:
Artikel kann nicht in folgende Länder versendet werden .Liste ansehen.
Artikel kann nicht in folgende Länder versendet werden:
ECCN:
EAR99
PCN-Informationen:
Datei
Datum
Assembly Site Change
11/07/2022 Details und Download
Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3Subject Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3.Reason Expansion of assembly and test location to assure continuity and increase of supply.Intended start of delivery 2023-02-25, or earlier, depending on customer?s approval
Produktstatus:
Aktiv
Aktiv
Infineon IPW60R099P6XKSA1 - Technische Eigenschaften
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 99mΩ |
| Rated Power Dissipation: | 278|W |
| Qg Gate Charge: | 70nC |
| Paketstil: | TO-247-3 |
| Montagemethode: | Through Hole |
Pricing Section
Weltweiter Lagerbestand:
0
Deutschland:
0
In Bestellung:
0
Standard-Hersteller-Lieferzeit:
13 Wochen
Menge
Internetpreis
240
1,98 $
480
1,96 $
720
1,95 $
1.200+
1,93 $
Product Variant Information section
Verfügbare Pakete
Paketmenge:
30 pro Tube
Paketstil:
TO-247-3
Montagemethode:
Through Hole