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Infineon | IPD15N06S2L64ATMA2

Codice produttore

IPD15N06S2L64ATMA2

N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252

Modello ECAD:
Fabbricante: Infineon
Confezione Standard:
Product Variant Information section
Codice data: 2543
Product Specification Section
Infineon IPD15N06S2L64ATMA2 - Caratteristiche Tecniche
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 64mΩ
Rated Power Dissipation: 47W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 19A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 21ns
Rise Time: 14ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 2.3mm
Length: 6.5mm
Input Capacitance: 354pF
Tipologia confezione:  PG-TO-252-3-11
Metodo di montaggio: Surface Mount
Pricing Section
Stock globale:
0
Germania:
0
In ordine:Order inventroy details
2.500
Stock in fabbrica:Stock in fabbrica:
0
Lead Time del produttore:
9 Weeks
Ordine minimo:
2500
Multiplo di:
2500
Totale
687,50 $
USD
Quantità
Prezzo unitario
2.500
0,275 $
7.500
0,27 $
12.500+
0,265 $
Product Variant Information section